Search Results - stanislav+soloviev

1 Results

Sort By:

A Method of Eliminating Forward Voltage Drift in SiC PiN and PN Diodes

Reference #: 00385 The University of South Carolina is offering licensing opportunities for this technology. Invention Description: This invention is a novel method for fabricating SiC PiN and PN diodes that do not experience voltage drift during operation. This new process involves the formation of a linearly graded, deep pn junction resulting from...

Published: 9/1/2022 | Inventor(s): Tangali Sudarshan, Stanislav Soloviev, Ying Gao

Keywords(s):

Category(s): Engineering and Physical Sciences, Energy