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Schottky Barrier Detection Devices Having a 4H-SiC n-Type Epitaxial Layer

Reference #: 1048 The University of South Carolina is offering licensing opportunities for a highly sensitive detector for low-energy x-rays, gamma rays, and high-energy particles. Invention Description: The subject invention is a detection device formed from Schottky diodes on 4H-SiC n-type epitaxial layers. It detects low-energy x-rays (50 eV to...

Published: 4/4/2017 | Inventor(s): Krishna Mandal, J. Russell Terry

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Category(s): Engineering and Physical Sciences